Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer
نویسندگان
چکیده
منابع مشابه
Fabrication and Characterization of 0.2μm InAlAs/InGaAs Metamorphic HEMT’s with Inverse Step- Graded InAlAs Buffer on GaAs Substrate
Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strainrelaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content....
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2010
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3275872